Abstract
Current and cathode electric field data have been measured in a constant-voltage accelerated test of metal-oxide-silicon (MOS) capacitors. The data show that the coefficients in the Fowler-Nordheim equation are: (1) random variables (varying across the MOS capacitors), and (2) have a correlation coefficient of 0.88. The analysis suggests that for typical electric fields used in accelerated testing of MOS capacitors, the standard deviation of log (failure time) increases with decreasing electrical stress. >
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