Comparisons of Two Turn-off Failures Under Clamped Inductive Load in Planar FS 3.3 kV/50 A IGBT Chip

Abstract

Turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> failure under clamped inductive load, is one of the most concerns in insulated gate bipolar transistor (IGBT) chips. Besides, this turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> failure can be attributed to two causes, i.e., the dynamic latch-up and the secondary breakdown. Despite great simulation work investigated previously, the experimental research should be further focused. Up to now, the typical features and differences for these two turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> failures still remain unclear. In this article, two failures’ waveforms are first compared in experiment. Moreover, their internal current, electric field, and temperature distributions are compared by simulation in detail. Then, two different failure features, focusing on the failure cell structures, are summarized from the scanning electron microscope (SEM) results for the first time. The marked signatures of these failures, such as the current filament path and the mixture region, are further analyzed in this article. According to the SEM results, the lateral and vertical current paths can be observed in dynamic latch-up chip and secondary breakdown chip, respectively. These failure signatures in waveforms and SEM results can contribute to the distinguished method to the failure causes in IGBT device, and enhance the chip's performance more effectively.