Abstract
The fabrication of silicon microelectromechanical components (MEMS) involves joining of two or even more wafers. During the last years special focus was given on low temperature wafer- bonding. In this paper an universal test wafer is proposed that can be applied for bond strength quality monitoring. The investigated wafers in this study were activated, wafer- bonded, annealed at 200 {degree sign}C or 400 {degree sign}C and subsequently tested with respect to dicing yield, tensile strength, fracture toughness, and surface energy. The wafer bonding was performed by seven different partners. It was shown that the bonding quality varied significantly for the different activation technologies even for the same annealing conditions. In general the special treated samples exceed the values of a RCA pre-treated reference sample annealed at 200 {degree sign}C. Some of the activation technologies were able to create bonds that reached the value of RCA pre-treated reference samples, which were annealed at 900 {degree sign}C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
