Comparison of Secondary Ion Emissions from Carbon Nanotubesunder Bombardments of MeV Si and Si2 Clusters

Abstract

The emission yields of H, H2, H3 and heavy ions from carbon nanotubesunder bombardments of Si and Si2 clusters in an energy range of0.3–3 MeV per atom are measured by using the time-of-flight technique(TOF). The emission yields of the secondary ions increase withincreasing energy of Si and the electronic stopping processes play animportant role. The enhanced emission yields of secondary ions inducedby Si2 clusters at the low energies are clearly seen and attributed tothe vicinage effect of the nuclear collision processes of clusterconstituents and the secondary ion emissions are still dominated byelectronic stopping processes at high energies.