Abstract
The resistance-area product ( R o A) of Schottky barrier and n-p diffused junction infrared detectors of PbSnTe, PbSnSe and HgCdTe under conditions of zero bias have been calculated over the temperature range of 50–200 K. The calculations are restricted to carrier concentrations in which Auger band-to-band recombination mechanism is predominant. A comparison of the detectivities, D,′ and the depletion layer capacitance per unit area, ( C/A), of various diodes has been made at 77K. The results indicate that even though n-p diffused PbSnTe and PbSnSe photodiodes have higher detectivities, their Schottky barrier diodes too have detectivities more than 10 11 Cm Hz 1 2 /W. The calculated value of the detectivity of HgCdTe Schottky barrier photodiode, however, turns out to be an order less.
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