Abstract
In this paper we present a direct comparison of the two basic techniques for trap extraction, the Random Telegraph Noise (RTN) and the Time Dependent Defect Spectroscopy (TDDS). By using the method of histograms, extracted from the measured drain current transients, we divided the recorded defects in three different categories. Results show that we night be able to detect traps deeper in the oxide and, also, near the dielectric/channel interface. As we scale down, we found a better correlation between the two methods, while the after stress results show a merging of the slopes compared to the bimodal distribution that appeared at the beginning.
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