Abstract
Gd2O3 andGd-doped HfO2 films were deposited on p-type silicon substrates in a reducing atmosphere.Gd 4f photoexcitation peaks at roughly 7 and 5 eV below the valenceband maximum have been identified using the resonant photoemission ofGd2O3 and Gd-dopedHfO2 films, respectively.In the case of Gd2O3, strong hybridization with the O 2p band is demonstrated, and thereis evidence that the Gd 4f weighted band exhibits dispersion in thebulk band structure. The rectifying (diode-like) properties of Gd-dopedHfO2–siliconand Gd2O3–silicon heterojunctions are demonstrated.
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