Abstract
The authors have fabricated planar InGaAs pin photodiodes designed for high-speed operation with rear metallic reflectors. The effectiveness of both Ti-Pt-Au and Au reflectors for enhancing the photoresponse of InGaAs pin photodiodes is evaluated. The experimental results show that an InGaAs pin photodiode with a 1 /spl mu/m absorption layer can achieve a responsivity >0.9 A/W (/spl sim/86% quantum efficiency) at 1.3 /spl mu/m wavelength with an Au reflector but can achieve only /spl sim/0.8 A/W (/spl sim/76% quantum efficiency) with a Ti/Pt/Au reflector. Furthermore, the reflectivity of both metallic mirrors (/spl sim/0.9 for Au and /spl sim/0.4 for Ti/Pt/Au) is extracted using a simple theoretical model.
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