Abstract
In this study, the electronic properties of Au/n-Si (MS) and Au/(In2O3-PVP)/n-Si (MPS) diode have been investigated to see the effects of an organic (In2O3-PVP) interlayer by utilizing voltage-dependent current (I) and capacitance (C) measurements. The organic indium oxide (In2O3) nanostructures were characterized by XRD, SEM and UV–Vis spectrophotometer techniques. The rectifying ratio (RR) of the fabricated MS and MPS diode at ± 3 V was found as 1.89 × 103 and 6.18 × 103, respectively. The electronic parameters for instance the ideality factor (n) and barrier height (ΦBo) of MS and MPS diode were found as 1.94 and 2.20, and 0.73 eV and 0.76 eV, respectively. Additionally, series resistance (Rs), n, and ΦBo values were calculated by using Cheung's functions as second way to see the used calculation method and voltage effects on them. Therefore, the Rs and ΦBo values were determined from both the Norde method and C–V characteristics.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
