Abstract
Pulsed terahertz (THz) radiation from the electron-hole plasma excited by a femtosecond optical pulse in GaAs-based emitters is studied by Monte Carlo simulations. The THz energy radiated from the n- and p-doped surface emitters, from the contactless p-i-n emitter, and from the photoconductive emitter is evaluated. It is found that the THz energy radiated by photoconductive emitter exceeds the energy radiated by the surface and p-i-n THz emitters by more than one order. The results of the simulations show that the efficiencies of the surface emitters are below the efficiency of the p-i-n emitter.
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