Abstract
In this paper, strain transfer efficiencies from a single crystalline piezoelectric lead magnesium niobate-lead titanate substrate to a GaAs semiconductor membrane bonded on top are investigated using state-of-the-art x-ray diffraction (XRD) techniques and finite-element-method (FEM) simulations. Two different bonding techniques are studied, namely, gold-thermo-compression and polymer-based SU8 bonding. Our results show a much higher strain-transfer for the “soft” SU8 bonding in comparison to the “hard” bonding via gold-thermo-compression. A comparison between the XRD results and FEM simulations allows us to explain this unexpected result with the presence of complex interface structures between the different layers.
Highlights
Piezoelectric materials have gained importance in terms of reversibly transferring strain to other materials, especially semiconductors, for the purpose of tuning the electrical and optical properties.[1,2]The magnitude of strain induced in this way is directly proportional to the electric field applied across the piezoelectric material, making use of the converse piezoelectric effect.[3]
Strain transfer efficiencies from a single crystalline piezoelectric lead magnesium niobatelead titanate substrate to a GaAs semiconductor membrane bonded on top are investigated using state-of-the-art x-ray diffraction (XRD) techniques and finite-element-method (FEM) simulations
Our results show a much higher strain-transfer for the “soft” SU8 bonding in comparison to the “hard” bonding via gold-thermo-compression
Summary
Piezoelectric materials have gained importance in terms of reversibly transferring strain to other materials, especially semiconductors, for the purpose of tuning the electrical and optical properties.[1,2]. The techniques used to bond the semiconductor on the piezoelectric substrate are mostly gold-thermo-compression or bonding mediated by a comparatively “soft” polymer. We investigate the strain transfer capabilities of gold and SU8 bonding interlayers by x-ray diffraction (XRD) measurements on 330-nm-thick GaAs membranes bonded on single crystalline piezoelectric lead magnesium niobate-lead titanate (PMN-PT) piezo-actuators. The strain transfer is analyzed by simultaneously acquiring the XRD reciprocal space maps (RSMs) of the bonded semiconductor film and the underlying single crystalline PMN-PT for different electric fields applied to the PMN-PT substrate. The results presented in this work provide in-depth understanding of the assets and weaknesses of the gold-thermo-compression and SU8 bonding techniques for an optimized exploitation of hybrid semiconductor-piezoelectric devices
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