Abstract
Lapping for sapphire substrates was evaluated with respect to material removal modes. Firstly, a 3-body removal mode that consists of diamond slurry and a metal–resin platen was tested. The metal–resin platen was produced by mixing metal particles (Cu, Al, and Sn) and resin. Secondly, we analyzed a 2-body system using a fixed diamond abrasive pad with a low concentration of alumina slurry as a dressing for the pad surface. For each lapping process, we examined the function of the diamond abrasive particles. The fundamental characteristics of each process were observed to suggest optimal conditions for sapphire processing for various applications.
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