Abstract
Interesting temperature-dependent characteristics of InP∕InGaAs-based single-heterojunction bipolar transistor (SHBT) and double-heterojunction bipolar transistor (DHBT) devices are compared and studied. Experimentally, both studied devices show wider collector current (IC) operation regions, with over 11 decades in magnitude of collector current (IC=10−12to10−1A). However, the studied DHBT exhibits improved breakdown characteristics [common-emitter breakdown voltage (BVCEO)=8.05V and common-base breakdown voltage (BVCBO)=11.3V] and low output conductance at high temperature. Moreover, the undesired current-blocking effect, switching, hysteresis phenomenon usually found in an InP∕InGaAs conventional DHBT are not observed in the DHBT device. As compared with the studied SHBT, the studied DHBT shows a lower multiplication factor and weaker temperature dependence. Therefore, it is known that, based on experimental results, the studied DHBT device provides the promise for low-voltage and low-power circuit app...
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