Abstract
We fabricated P and B-doped Si nanocrystals (Si NCs) by high temperature annealing doped amorphous Si/SiO2 multilayers. We found that B impurity had the higher doping efficiency but the less activation efficiency than P atoms in Si NCs. The electrical properties of Si NCs films were systematically investigated by temperature-dependent conductivity and Hall measurements. The carrier transport properties exhibited the different characteristics after P and B-doping, especially the metal-like conductance performance at high doping levels. Our results revealed the different P and B doping behaviors in Si NCs, which is helpful for developing the Si NCs-based devices.
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