Abstract
Optical absorption spectra between 0.6 and 2 eV have been obtained for codeposited, intrinsic and doped, r.f. glow discharge a-Si:H samples both by photothermal deflection spectroscopy (PDS) and photoconductivity (PC) methods, always normalized at high energies to transmission data. The spectra found by the two methods fit very well in the region of the Urbach edge. For lower energies the PDS absorption coefficients decrease monotonically and asymptote, as the sample thickness is increased, to values attributed (for intrinsic samples) to localized-localized transitions. The PC absorption coefficients are almost always lower, depend on light exposure, depend less on sample thickness, and display spectral characteristics reflecting the dependence on photon energy of the production of mobile photoelectrons and photoholes.
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