Abstract
All-inorganic perovskite had been widely used in various fields such as photodetectors, solar cells, and memory devices. In this work, the resistive switching memory with a structure of FTO/CsPbBr3/Au was fabricated by a one-step solution method under low temperature to achieve the compact CsPbBr3 film with pure phase. The device showed typical bipolar resistive switching characteristic with high ON/OFF ratio (> 103), excellent endurance property, reproducibility and long data retention (> 103 s). Especially, the memory maintained outstanding performance without obvious degradation under high temperature and high humidity, showing notable thermal stability and environmental stability. These results demonstrate that CsPbBr3 memory has a promising application in the next-generation nonvolatile memory device.
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