Abstract
Optical lithography has been actively used over the past decades to produce more and more dense integrated circuits. To keep with the pace of the miniaturization, light of shorter and shorter wavelength was used with time. The capabilities of the present 193-nm UV photolithography were expanded time after time, but it is now believed that further progress will require deployment of extreme ultraviolet (EUV) lithography based on the use of 13.5-nm radiation. However, presently no light source exists with sufficient average power to enable high-volume manufacturing. We report here the results of a study that shows the feasibility of a free-electron laser EUV source driven by a multiturn superconducting energy-recovery linac (ERL). The proposed $40\ifmmode\times\else\texttimes\fi{}20\text{ }\text{ }{\mathrm{m}}^{2}$ facility, using MW-scale consumption from the power grid, is estimated to provide about 5 kW of average EUV power. We elaborate the self-amplified spontaneous emission (SASE) option, which is presently technically feasible. A regenerative-amplifier option is also discussed. The proposed design is based on a short-period (2--3 cm) undulator. The corresponding electron beam energy is about 0.5--1.0 GeV. The proposed accelerator consists of a photoinjector, a booster, and a multiturn ERL.
Highlights
Optical lithography has been used by the semiconductor industry over the past few decades to produce more and more fine features, and more and more dense and powerful integrated circuits
The capabilities of the present 193-nm UV photolithography were expanded time after time, but it is believed that further progress will require deployment of extreme ultraviolet (EUV) lithography based on the use of 13.5-nm radiation
We report here the results of a study that shows the feasibility of a free-electron laser EUV source driven by a multiturn superconducting energyrecovery linac (ERL)
Summary
Optical lithography has been used by the semiconductor industry over the past few decades to produce more and more fine features, and more and more dense and powerful integrated circuits. It is believed that further progress will require deployment of extreme ultraviolet lithography (EUVL) based on use of 13.5-nm radiation. Considerable effort was invested in the development of different aspects of the EUVL, including plasma-based sources of EUV radiation [2]. Laser-produced plasma (LPP) sources for lithography are under rapid development and show essential progress. A source with sufficient average power that enables EUVL high-volume manufacturing still has not been developed. This study shows the feasibility of a free-electron laser (FEL) EUV source driven by a multiturn superconducting energy-recovery linac (ERL). The use of a high-gain FEL for the EUV lithography was proposed about a decade ago [3]. Further size decrease and performance improvement may be achieved by the use of a regenerative amplifier FEL [7], which is discussed below. It should be mentioned that a recent Jefferson Lab proposal [8] for 10–100 eV photons FEL has for obvious reasons (100-eV photons correspond to 12.4-nm wavelength) some similarity to the discussed design
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physical Review Special Topics - Accelerators and Beams
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
