Abstract
The impact of chemical precursor modification on the electronic properties of chemical solution deposition derived niobium oxide thin-films has been evaluated. It has been found that the application of certain chemical modifications is mandatory in order to obtain electrically insulating thin-films at low processing temperatures. It is emphasized that the devised optimal way of processing for the niobium component is widely contrary to the solution based processing of potassium sodium niobate films reported so far. Regarding the physical nature of the observed instabilities, the phase evolution of solution processed niobium oxide films has been studied. It has been detected that the organic fraction in the precursor solution is stable up to high temperatures and as a result, the low temperature crystalline TT-phase of niobium oxide is preserved up to unusually high processing temperatures. The inherent structural distortion of the unit cells may present a new defect mechanism that has to be further investigated regarding the inferior ferroelectric properties of chemical solution derived potassium sodium niobate thin-films, which are often observed.
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