Abstract
These comments aim to correct some apparent weaknesses in the theory of field electron emission given in a recent paper about nanoscale vacuum channel transistors, and to improve the presentation of this theory. In particular, it is argued that a “simplified” formula stated in the paper should not be used, because this formula is known to under-predict emission current densities by a large factor (typically around 300 for an emitting surface with local work function 4.5 eV). Thus, the “simplified” formula may significantly under-predict the practical performance of a nanoscale vacuum channel transistor.
Highlights
These comments aim to correct some apparent weaknesses in the theory of field electron emission given in a recent paper about nanoscale vacuum channel transistors, and to improve the presentation of this theory
It is argued that a “simplified” formula stated in the paper should not be used, because this formula is known to under-predict emission current densities by a large factor
The “simplified” formula may significantly under-predict the practical performance of a nanoscale vacuum channel transistor
Summary
Comment on “Design and circuit simulation of nanoscale vacuum channel transistors” by J. The constants are known to at least the accuracy stated, but should be suitably rounded in technological contexts Inserting these constants into eqn (1) yields a common modern form for the Murphy–Good FE equation: J. Failure to state the units can lead to dimensional inconsistency and discrepancies Just below their eqn (2), Ji Xu et al give the value of B as 6.83 Â 107: this numerical value has probably been taken from a paper where elds were being measured in V cmÀ1. The authors attempt to formulate a relationship between average eld Fav and the voltage V between the emitter and the counter-electrode. The formula that they require is . The second modi cation made by the authors is to “simplify” eqn (4) by setting t(y) and v(y) equal to unity, yielding (before conversion to voltage-based form)
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