Abstract
In this paper we combine LBIC and EL measurements of commercially multi-crystalline silicon solar cells, in order to obtain detailed information about the electrical activity around defect areas. This integrated analysis is suitable for the study of different crystal defects at both micrometric and full wafer scale. In particular, the electrical activity of some defect areas is studied in detail by means of highly spatially-resolved LBIC maps, showing important differences in their behaviours. A discussion about the origin of these differences is presented.
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