Abstract
Silicon light source plays a key role in silicon optoelectronics, but its realization is an extremely challenging task. Although there are longterm intensive efforts to this topic, the power conversion efficiency (PCE) of the silicon-based electroluminescence is still no more than 1%. In this present report, a highly efficient silicon light source has been achieved. The device structure is p-Si (5 Omegacm)/ SiO2(approximately 2 nm)/ NPB / CBP: (ppy)(2)Ir(acac) / Bphen /Bphen: Cs2CO3 / Sm / Au. The SiO2 passivated Si is the anode having a suitably high hole-injection ability, and CBP: (ppy)(2)Ir(acac) is a highly efficient phosphor doped organic material. The device turn-on voltage is 3.2 V. The maximum luminance efficiency and maximum luminous power efficiency reach 69 cd/A and 62 lm/W, respectively, corresponding to a maximum PCE of 12% and an external quantum efficiency of 17%.
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