Abstract
Photonic or electronic confinement effects in nanostructures become significant when one of their dimension is in the 5--300 nm range. Improving their development requires the ability to study their structure-shape, strain field, and interdiffusion maps. We have used coherent-diffraction imaging to record the three-dimensional scattered intensity of single silicon nanowires with a lateral size smaller than 100 nm. We show that this intensity can be used to recover the hexagonal shape of the nanowire with a 28 nm resolution. This paper also discusses the limits of the method in terms of radiation damage.
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