Coexisting Triferroic and Multiple Types of Valley Polarization by Structural Phase Transition in 2D Materials
Abstract The multiferroic materials, which coexist magnetism, ferroelectric, and ferrovalley, have broad practical application prospects in promoting the miniaturization and integration of spintronic and valleytronic devices. However, it is rare that there are triferroic orders and multiple types of valley polarization in a real material. Here, a mechanism is proposed to realize triferroic order coexistence and multiple types of valley polarization by structural phase transition in 2D materials. The 1T and 2H phase OsBr2 monolayers exhibit non‐magnetic semiconductor and ferromagnetic semiconductor with valley polarization up to 175.49 meV, respectively. Interestingly, the 1T phase OsBr2 bilayer shows the tri‐state valley polarization due to lattice symmetry breaking, while the valley polarization of 2H phase bilayer originates from the combined effect of time‐reversal symmetry breaking and spin‐orbit coupling. Furthermore, the valley polarization and ferroelectric polarization of 1T phase AB stackings and 2H phase AA stackings can be manipulated via interlayer sliding. Importantly, it is verified that the 2H phase can be transformed to 1T phase by Li+ ion intercalation, while the 2H phase can occur the structural phase transition into the 1T phase by infrared laser induction. This work provides a feasible strategy for manipulating valley polarization and a design idea for nano‐devices with nonvolatile multiferroic properties.
9
- 10.1021/acs.nanolett.2c03791
- Nov 11, 2022
- Nano Letters
6
- 10.1103/physrevb.111.085432
- Feb 28, 2025
- Physical Review B
70
- 10.1021/acs.nanolett.4c00597
- Mar 7, 2024
- Nano Letters
72718
- 10.1103/physrevb.59.1758
- Jan 15, 1999
- Physical Review B
36
- 10.1103/physrevb.108.195424
- Nov 21, 2023
- Physical Review B
50
- 10.1126/science.adk9749
- May 10, 2024
- Science
2025
- 10.1103/physrevlett.99.236809
- Dec 7, 2007
- Physical Review Letters
16
- 10.1103/physrevb.101.024412
- Jan 15, 2020
- Physical Review B
672
- 10.1021/acs.nanolett.5b02091
- Aug 20, 2015
- Nano Letters
47
- 10.1103/physrevb.105.235416
- Jun 10, 2022
- Physical Review B
- Research Article
- 10.1063/5.0288245
- Aug 12, 2025
- Journal of Applied Physics
Controlling two-dimensional (2D) valleytronics is challenging for information technology. This study shows that a ferroelectric-assisted layer can effectively enable non-volatile control of 2D valleytronics. Using first-principles simulations, we find that different polarization states in the Sc2CO2 layer cause the RuBrF monolayer to transition from a semiconductor to a half-metal, while also changing magnetic anisotropy from in-plane to out-of-plane. In the −P state, the system behaves as a ferromagnetic semiconductor with a spontaneous valley polarization of 329 meV. In the +P state, it becomes a ferromagnetic half-metal, blocking valleytronics. This enables electro-reversible control of valley electrons in the RuBrF/Sc2CO2 heterostructure. We explain the modulation of magnetic anisotropy and valley polarization using second-order perturbation theory and the k⋅p model. Our work offers a promising approach for non-volatile valleytronic control at the nanoscale, aiding the design of new devices.
- Research Article
- 10.1002/lpor.202500687
- Jun 18, 2025
- Laser & Photonics Reviews
Abstract While conventional understanding holds that electron spin‐valley relaxation in monolayer MoS 2 is highly sensitive to weak transverse magnetic fields and thermal activation, the research reveals a different scenario when monolayer MoS 2 is encapsulated in hexagonal boron nitride (h‐BN). Using time‐resolved Faraday rotation spectroscopy, it is found that the spin‐valley dynamics in h‐BN encapsulated monolayer MoS 2 are independent of transverse magnetic fields and only weakly dependent on temperature. Notably, the spin‐valley polarization in h‐BN encapsulated monolayer MoS 2 remains robust even at room temperature, exhibiting a biphasic behavior with lifetimes of 23 and 146 ps, attributed to itinerant electrons and trions, respectively. The study also clarifies the origin of the previously reported magnetic field‐sensitive spin‐valley component in monolayer MoS 2 , demonstrating that it likely originates from localized states rather than itinerant electrons and is absent in h‐BN encapsulated MoS 2 . These findings not only update the understanding of spin‐valley relaxation in monolayer MoS 2 but also provide insights into the complexity and diversity of spin‐valley relaxation phenomena in monolayer transition metal dichalcogenides.
- Research Article
- 10.1039/d5nh00215j
- Jan 1, 2025
- Nanoscale horizons
Layertronics, engineering the electronic properties through the layer degree of freedom, has attracted considerable attention due to its promising applications in next-generation spintronic technologies. Here, by coupling sliding ferroelectricity with A-type antiferromagnetism, we demonstrate a mechanism for layer-polarization-engineered electronic property through symmetry analysis based on the tight-binding (TB) model. It is found that breaking the inversion symmetry and time-inversion symmetry in the model gives rise to ferroelectricity and a layer-polarized anomalous valley Hall effect. Crucially, this valley polarization is ferroelectrically switchable, enabling non-volatile electrical control of the layer-resolved Berry curvature. Using first-principles calculations, this mechanism and phenomenon are verified in the multiferroic bilayer Janus RuClF. Our findings provide a promising platform for 2D bilayer materials, which hold great potential for applications in nanoelectronic and spintronic devices.
- Research Article
- 10.1021/acs.jpcc.5c01893
- Jun 2, 2025
- The Journal of Physical Chemistry C
Ferroelectricity and Phase Transition in Sn<sub>4</sub>X<sub>4</sub> (X = O, S, Se) Monolayers
- Research Article
- 10.1002/adfm.202513732
- Aug 1, 2025
- Advanced Functional Materials
Abstract Achieving reversible ferroelectric control over native valley polarization under ambient conditions is of extreme significance for both fundamental physics and information technology, yet such theoretical and experimental breakthroughs have not been made thus far. Here, from first‐principles and Monte Carlo simulations it is first manifested that the synthesizable RuO2(SiN)2 hexagonal monolayer in experimentally reachable strain regime always behaves as an ideal ferrovalley semiconductor, rarely characterized by both robust out‐of‐plane ferromagnetism and nonvolatile switchable valley polarization simultaneously above room‐temperature. More excitingly, its parallel‐stacked A‐type antiferromagnetic ground state generates out‐of‐plane ferroelectricity due to interlayer charge transfer, whose polarity can be inverted by lateral rigid sliding with an ultralow switching barrier. In resulting above‐room‐temperature multiferroics, the flip of ferroelectric polarization under a short‐term pulse voltage enables nonvolatile switchability of sizable valley polarization, which lays a solid foundation for the commercialization of high‐efficient post‐Moore era's multifunctional nanoelectronics. Our k·p model analysis not only captures this overall scenario but also largely expands both monolayer ferrovalley candidates isoelectronic to RuO2(SiN)2 and resultant sliding multiferroic family due to numerous choices of constituent metal and ligand elements.
- Research Article
3
- 10.1103/physrevapplied.23.034032
- Mar 14, 2025
- Physical Review Applied
Ferroelectric tuning of the valley polarized metal-semiconductor transition in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mi>Mn</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">P</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">S</mml:mi></mml:mrow><mml:mn>3</mml:mn></mml:msub><mml:msub><mml:mi>Se</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math> / <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mi>Sc</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>CO</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> van der Waals heterostructures and application to nonlinear Hall effect devices
- Research Article
2
- 10.1063/5.0267525
- Apr 21, 2025
- Applied Physics Letters
Altermagnetism, a recently identified form of unconventional antiferromagnetism (AFM), enables the removal of spin degeneracy in the absence of net magnetization that provides a platform for the low power consumption and ultra-fast device applications. However, a little attention has been paid to the relationship between stacking, strain, and altermagnet, the multipiezo effect, and the topological state. Here, we propose a mechanism to realize the altermagnet, the multipiezo effect, and the topological state in two-dimensional (2D) materials by the stacking and strain engineering. Based on the analysis of symmetry, we find that the spin splitting feature related to the Ut, PTt, MzUt, or MzPTt symmetries in altermagnet multilayers. In addition, we find that the stacking engineering can effectively realize the transform from antiferromagnetism to altermagnetism and semiconductor to metal for the Janus bilayer V2SeTeO. More interestingly, the strain not only induces an intriguing multipiezo effect, encompassing the piezovalley, piezomagnetism, and piezoelectric, but also achieves the abundant topological phase. Our findings offer a generalized direction for manipulating the spin splitting, valley polarization, and topological states, promoting practical application of valleytronic and spintronic devices based on two-dimensional altermagnets.
- Research Article
- 10.1103/shvd-vmvs
- Jun 13, 2025
- Physical Review B
Multifield-induced antiferromagnet transformation into altermagnet and realized anomalous valley Hall effect in monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>VPSe</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>
- Research Article
- 10.1021/acsami.5c15011
- Aug 5, 2025
- ACS applied materials & interfaces
Atomic-scale elucidation of phase transition pathways in two-dimensional (2D) materials is practically necessary for achieving desired architectures in next-generation devices, yet it remains hindered by insufficient understanding of defect-mediated kinetics. Here, we study the behavior of Se defects in mediating phase transitions in single-layer (SL) VSe2 grown on Au(111), achieved through controlled thermal annealing and selenium (Se) replenishment. Using scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES), we find that the initial SL VSe2 is a 1T phase featuring a substrate-induced moiré superstructure and that several annealing stages lead to two defective, Se-poor phases with an increased in-plane lattice constant. Density functional theory (DFT) calculations, which align closely with experimental findings, provide insights into the atomic structures of the defective V selenide compounds. Analysis of the calculated phase transition pathway reveals that the formation of Se defects is directly correlated with the annealing temperature, and the density of Se defects plays an important role in stabilizing the 2H phase in the streaked domain and modulating the phase transition. This study highlights the potential of properly controlling the density of Se defects in VSe2 to manipulate the ratio of different phases within streaked domains, enabling tunable phase-engineered 2D van der Waals structures.
- Research Article
- 10.1021/jacs.4c13863
- Feb 7, 2025
- Journal of the American Chemical Society
Two-dimensional materials, such as transition metal dichalcogenides (TMDCs) in the 2H or 1T crystal phases, are promising (electro)catalyst candidates due to their high surface-to-volume ratio and composition of low-cost, abundant elements. While the edges of elemental TMDC nanoparticles, such as MoS2, can show significant catalytic activity, the basal plane of the pristine materials is notoriously inert, which limits their normalized activity. Here, we show that high densities of catalytically active sites can be formed on the TMDC basal plane by alloying elements that prefer the 2H (1T) phase into a 1T (2H) structure. The global stability of the alloy, in particular, whether it crystallizes in the 2H or 1T phase, can be controlled by ensuring a majority of elements prefer the target phase. We further show that the mixing entropy plays a decisive role in stabilizing the alloy, implying that high-entropy alloying becomes essential. Our calculations point to a number of interesting nonprecious hydrogen evolution catalysts, including (CrTaVHfZr)S2 and (CrNbVTiZr)S2 in the 1T-phase and (MoNbTaVTi)S2 in the 2H-phase. Our work opens new directions for designing catalytic sites via high-entropy alloy stabilization of locally unstable structures.
- Dissertation
- 10.25417/uic.15261813.v1
- Mar 29, 2021
The preceding decade have witnessed incredible advances in the research of two-dimensional (2D) materials such as graphene, transition metal carbides and nitrides (MXenes), and transition metal dichalcogenides (TMDCs). Since their discovery, 2D materials have enabled the design of nano-scale devices with unique functionalities that are otherwise unavailable in conventional 3D systems. This dissertation focus on the electrical an thermal properties of these materials and presents the study of (1) contribution of the encapsulating layers and (2) surface parameters to the thermal transport at the van der Waals interfaces, (3) synthesis of quasi-binary TMDC alloys through computationally predicted stability maps, and (4) the phase‐dependent band gap engineering in alloys induced by charge density wave (CDW) phases. In the first and second project, power dissipation and thermal management in the nanoscale structures are investigated which is of great importance for the design and operation of energy-efficient 2D nano-devices. Energy transport is heavily dependent of the thermal boundary conductance (TBC) at the van der Waals interfaces, particularly coupling at the interface of 2D channels with their underlying 3D substrates. A low TBC with underlying substrates puts an extrinsic limitation on the ability of 2D materials to conduct heat and dissipate the applied power. In this project a novel self-heating/self-sensing electrical thermometry platform based on atomically thin Ti3C2Tz MXene sheets is developed, which enables experimental investigation of the thermal transport at a Ti3C2Tz/SiO2 interface, with and without an encapsulating layer. Furthermore, the hydrophilic nature and variability of MXene surface terminations together with their metallic nature, provide a new platform to study the effect of the surface parameters on the thermal transport through and along the 2D flakes. In the third project, at theory-guided synthesis approach is employed to achieve 25 unexplored quasi-binary TMDC alloys through computationally predicted stability maps and equilibrium temperature-composition phase diagrams. Compared to other 2D materials, TMDCs exhibit diverse, exciting physical properties, including topological insulator behavior, superconductivity, valley polarization, and superior electrocatalytic activity compared to noble metals. Their properties can be further tuned — or even new properties engineered — by alloying two different elements at either the transition metal or the chalcogen site to form quasi-binary alloys, or by simultaneous alloying at both the sites to form quaternary alloys. The synthesized alloys can be exfoliated into 2D structures, and some of them exhibit: (i) outstanding thermal stability tested up to 1230K, (ii) exceptionally high electrochemical activity for CO2 reduction reaction, (iii) excellent energy efficiency in a high rate Li-air battery, and (iv) high break-down current density for interconnect applications. In the last project, a novel form of bandgap engineering involving alloying non‐isovalent cations in a 2D transition metal dichalcogenide (TMDC) is presented. By alloying semiconducting MoSe2 with metallic NbSe2, two structural phases of Mo0.5Nb0.5Se2, the 1T and 2H phases, are produced each with emergent electronic structure. At room temperature, it is observed that the 1T and 2H phases are semiconducting and metallic, respectively. For the 1T structure, scanning tunneling microscopy/spectroscopy (STM/STS) is used to measure band gaps. Electron diffraction patterns of the 1T structure obtained at room temperature show the presence of a nearly commensurate charge density wave (NCCDW) phase with periodic lattice distortions.
- Research Article
8
- 10.31635/ccschem.021.202000578
- Jan 8, 2021
- CCS Chemistry
Phase-Controlled 1T Transition-Metal Dichalcogenide-Based Multidimensional Hybrid Nanostructures
- Research Article
133
- 10.1016/j.ccr.2019.213020
- Sep 4, 2019
- Coordination Chemistry Reviews
A fantastic two-dimensional MoS2 material based on the inert basal planes activation: Electronic structure, synthesis strategies, catalytic active sites, catalytic and electronics properties
- Research Article
11
- 10.1103/physrevb.100.014108
- Jul 30, 2019
- Physical Review B
Electrical and optoelectronic properties of two-dimensional (2D) transition metal dichalcogenides (TMDCs) can be tuned by exploiting their structural phase transitions. Here semiconducting (2H) to metallic (1T) phase transition is investigated in a strained ${\mathrm{MoWSe}}_{2}$ monolayer using molecular dynamics (MD) simulations. Novel intermediate structures called $\ensuremath{\alpha}$ and $\ensuremath{\beta}$ are found between the 2H and 1T phases. These intermediate structures are similar to those observed in a 2D $\mathrm{Mo}{\mathrm{S}}_{2}$ by scanning transmission electron microscopy. A deep generative model, namely the variational autoencoder (VAE) trained by MD data, is used to generate novel heterostructures with $\ensuremath{\alpha}$ and $\ensuremath{\beta}$ interfaces. Quantum simulations based on density functional theory show that these heterostructures are stable and suitable for novel nanoelectronics applications.
- Research Article
4
- 10.1039/d4cp04017a
- Jan 1, 2025
- Physical chemistry chemical physics : PCCP
Transition metal dichalcogenides (TMDs) exhibit a wide range of electronic properties due to their structural diversity. Understanding their defect-dependent properties might enable the design of efficient, bright, and long-lifetime quantum emitters. Here, we use density functional theory (DFT) calculations to investigate the 2H, 1T, and 1T' phases of MoS2, WS2, MoSe2, WSe2 and the effect of defect densities on the electronic band structures, focusing on the influence of chalcogen vacancies. The 2H phase, which is thermodynamically stable, is a direct band gap semiconductor, while the 1T phase, despite its higher formation energy, exhibits metallic behavior. 1T phases with spin-orbit coupling show significant band inversions of 0.61, 0.77, 0.24 and 0.78 eV for MoS2, MoSe2, WS2 and WSe2, respectively. We discovered that for all four MX2 systems, the energy difference between 2H, 1T and 1T phases decreases with increasing concentration of vacancies (from 3.13% to 21.88%). Our findings show that the 2H phase also has minimum energy values depending on vacancies. TMDs containing W were found to have a wider bandgap compared to those containing Mo. The band gap of 2H WS2 decreased from 1.81 eV (1.54 eV with SOC included) under GGA calculations to a range of 1.37 eV to 0.79 eV, while the band gap of 2H MoSe2 reduced from 1.43 eV (1.31 eV with SOC) under GGA to a range of 0.98 eV to 0.06 eV, depending on the concentration. Our findings provide guidelines for experimental screening of 2D TMD defects, paving the way for the development of next-generation spintronic, electronic, and optoelectronic devices.
- Research Article
102
- 10.1039/c9nr04449c
- Jan 1, 2019
- Nanoscale
Two-dimensional (2D) Cr-based layered and non-layered materials such as CrI3, Cr2Ge2Te6, Cr2S3, CrSe, and CrOX (X = Cl and Br) have attracted considerable attention due to their potential application in spintronics. Despite few experimental studies, theoretical studies reported that 2D chromium dichalcogenide (CrS2) materials show unique properties such as valley polarization, piezoelectric coupling, and phase dependent intrinsic magnetic properties. Here, we report for the first time the synthesis of 2D layered CrS2 flakes down to the monolayer via the chemical vapor deposition (CVD) method, its phase structures and electronic properties. We observed the 2H, 1T, and 1T' phases coexisting in CVD grown monolayer CrS2. The formation of 1T' phases from 1T phases is described by dimerization of metal atoms at room temperature according to our molecular dynamics studies. The coexistence of 1T and 1T' phases with 2H phases is referred to as the 1T and 1T' puddling phenomenon. We theoretically showed that the monolayer 2H-CrS2 is a direct bandgap semiconductor with a gap of approximately 0.95 eV predicted by the PBE functional, while the 1T- and 1T'-CrS2 are metallic and semi-metallic with approximately 10 meV gap, respectively. Furthermore, 2H CrS2 exhibits nonmagnetic semiconducting properties while for ferromagnetic spin configuration, the 1T and 1T' CrS2 show magnetic characteristics with 0.531μB and 2.206μB magnetic moment per Cr atom respectively, for ferromagnetic spin configuration as predicted from DFT+U calculation. Importantly, CrS2-based field-effect transistors exhibit a p-type behavior. Our study would stimulate further exploration of 2D layered CrS2 with astonishing properties and open up a whole new avenue for the urgent need for developing multifunctional 2D materials for nanoelectronics, valleytronics, and spintronics.
- Research Article
3
- 10.1016/j.commatsci.2022.111823
- Oct 10, 2022
- Computational Materials Science
Magnetism in single-layer of Zrse[formula omitted] by substituting 3[formula omitted] transition metals for Zr: Structural symmetry versus exchange splitting
- Research Article
13
- 10.1021/acsami.1c21226
- Jan 14, 2022
- ACS Applied Materials & Interfaces
Thermal rectifiers and thermal transistors are expected to be widely used for efficient thermal management and energy cascade utilization due to their excellent directional thermal management. Two-dimensional micro/nano materials have huge potential in the applications of thermal transistors, thermal logic circuits, and thermal rectifiers owing to the phase transition and thermal rectification phenomenon. Herein, a lithium intercalation method was used to transform 2H-MoS2 into the 1T phase with a purity of 76%, and a suspended microelectrode was applied to measure the thermal conductivity and thermal rectification coefficient of the same MoS2 film with 1T and 2H phases in suit. The thermal conductivity and thermal rectification effect of two-phase MoS2 couple with its phase state and structure were also obtained. The results demonstrate that the thermal conductivities of MoS2 in both 1T and 2H phases decrease with increasing temperature. It is also found that the thermal rectification coefficient has no obvious dependence on the temperature and phase change but the asymmetric structure. Furthermore, a thermal rectifier and transistor with a high thermal rectification effect are designed. The direction and magnitude of heat flow through the samples can be effectively controlled and managed by adjusting the phase, size, and structural asymmetry of the different samples. The maximum thermal rectification coefficient of the thermal rectifiers is up to 0.8.
- Research Article
54
- 10.1002/cctc.201901569
- Dec 18, 2019
- ChemCatChem
In this work, a novel microwave hydrothermal method is developed to prepare hybrid 1T@2H−MoS2 nanospheres, with the 1T and 2H phases confirmed by high‐resolution transmission electron microscopy (HRTEM), X‐ray photoelectron spectroscopy (XPS) and the stability of the hybrid phase verified by Raman spectroscopy. The efficiencies of methyl orange (MO) degradation and photo‐reduction of Cr(VI) by hybrid 1T@2H−MoS2 are much higher than those by 2H−MoS2, which should be attributed to the synergistic effect of the coexistent 1T and 2H phases. In addition, the hybrid sample prepared by microwave method possesses superior photocatalytic performance than that by conventional hydrothermal method, due to the higher 1T phase concentration and different crystallinity. Free‐radical capture experiments show that .O2− dominates the photocatalytic degradation process with 1T phase producing more electrons. The introduction of 1T−MoS2 into 2H−MoS2 shows great potential for photocatalytic degradation, while microwave treatment could be an effective method to prepare the hybrid phase MoS2.
- Research Article
109
- 10.1063/1.4905656
- Jan 5, 2015
- Applied Physics Letters
The magnetic properties of 2H phase of MoS2 (2H-MoS2) and 1T phase of MoS2 (1T-MoS2) were investigated both experimentally and theoretically. Lithium (Li) intercalation method was used to prepare single-layer MoS2 sheets. It was found that pristine MoS2 (2H-MoS2) exhibited weak diamagnetism. After exfoliating by Li intercalation, the crystal structure transformed from 2H to 1T phase, and the magnetism was significantly enhanced from diamagnetism to paramagnetism accordingly. With further annealing in argon atmosphere, the 2H phase recovered gradually from 1T phase, and the magnetism decreased correspondingly. Using crystal field theory and combining the results of first principle calculation, we conclude that the enhanced magnetism can be attributed to the Mo atoms of 1T-MoS2.
- Research Article
32
- 10.1103/physrevmaterials.4.074002
- Jul 6, 2020
- Physical Review Materials
The structural, electronic, and magnetic properties of VSSe, VSeTe, VSTe monolayers in both 2H and 1T phases are investigated via first-principles calculations. The 2H phase is energetically favorable in VSSe and VSeTe, whereas the 1T phase is lower in energy in VSTe. For V-based Janus monolayers in the 2H phase, calculations of the magnetic anisotropy show an easy-plane for the magnetic moment. As such, they should not exhibit a ferromagnetic phase transition, but instead, a Berezinskii-Kosterlitz-Thouless (BKT) transition. A classical XY model with nearest-neighbor coupling estimates critical temperatures (T$_{BKT}$) ranging from 106 K for VSSe to 46 K for VSTe.
- Research Article
1153
- 10.1021/jacs.6b03714
- Jun 21, 2016
- Journal of the American Chemical Society
Molybdenum disulfide (MoS2) is a promising nonprecious catalyst for the hydrogen evolution reaction (HER) that has been extensively studied due to its excellent performance, but the lack of understanding of the factors that impact its catalytic activity hinders further design and enhancement of MoS2-based electrocatalysts. Here, by using novel porous (holey) metallic 1T phase MoS2 nanosheets synthesized by a liquid-ammonia-assisted lithiation route, we systematically investigated the contributions of crystal structure (phase), edges, and sulfur vacancies (S-vacancies) to the catalytic activity toward HER from five representative MoS2 nanosheet samples, including 2H and 1T phase, porous 2H and 1T phase, and sulfur-compensated porous 2H phase. Superior HER catalytic activity was achieved in the porous 1T phase MoS2 nanosheets that have even more edges and S-vacancies than conventional 1T phase MoS2. A comparative study revealed that the phase serves as the key role in determining the HER performance, as 1T phase MoS2 always outperforms the corresponding 2H phase MoS2 samples, and that both edges and S-vacancies also contribute significantly to the catalytic activity in porous MoS2 samples. Then, using combined defect characterization techniques of electron spin resonance spectroscopy and positron annihilation lifetime spectroscopy to quantify the S-vacancies, the contributions of each factor were individually elucidated. This study presents new insights and opens up new avenues for designing electrocatalysts based on MoS2 or other layered materials with enhanced HER performance.
- Research Article
47
- 10.1016/j.ssc.2019.113739
- Sep 28, 2019
- Solid State Communications
New predicted two-dimensional MXenes and their structural, electronic and lattice dynamical properties
- Research Article
- 10.4208/jams.091115.102115a
- Jun 1, 2016
- Journal of Atomic and Molecular Sciences
Two-dimensional (2D) molybdenum disulfide $(MoS_2)$ promised a wide range of potential applications. Here, we report the transport investigations on the $MoS_2$ from Armchair (AC) and Zigzag (ZZ) directions with different kinds of leads. The conductance of 2H phase $MoS_2$ depended on the transport directions and lead types (2H phase or 1T phase). System with 1T phase $MoS_2$ as lead can impressively improve the transport properties compared with the 2H phase lead. Moreover, for the system with metal lead, enhanced conductance can be observed, which contrast to the experiment measurements. Further investigation indicated that the conductance sensitively relies on the distance between metal lead and 2D material. The present theoretical results suggested the lead material and interface details are both important for $MoS_2$ transport exploration, which can provide vital insights into the other 2D hybrid materials.
- New
- Research Article
- 10.1002/adfm.202527071
- Nov 6, 2025
- Advanced Functional Materials
- New
- Research Article
- 10.1002/adfm.202519503
- Nov 6, 2025
- Advanced Functional Materials
- New
- Research Article
- 10.1002/adfm.202524109
- Nov 5, 2025
- Advanced Functional Materials
- New
- Research Article
- 10.1002/adfm.202520191
- Nov 5, 2025
- Advanced Functional Materials
- New
- Research Article
- 10.1002/adfm.202522306
- Nov 5, 2025
- Advanced Functional Materials
- New
- Research Article
- 10.1002/adfm.202521093
- Nov 5, 2025
- Advanced Functional Materials
- New
- Research Article
- 10.1002/adfm.202520999
- Nov 5, 2025
- Advanced Functional Materials
- New
- Research Article
- 10.1002/adfm.202518925
- Nov 5, 2025
- Advanced Functional Materials
- New
- Research Article
- 10.1002/adfm.202518451
- Nov 5, 2025
- Advanced Functional Materials
- New
- Research Article
- 10.1002/adfm.202523772
- Nov 5, 2025
- Advanced Functional Materials
- Ask R Discovery
- Chat PDF
AI summaries and top papers from 250M+ research sources.