Abstract
This work reports the coexistence of bipolar and unipolar resistive switching behaviors in the flexible Ni/TiO2/Cu device. The amorphous TiO2 thin film was deposited by radio frequency magnetron sputtering method on flexible copper (Cu) foil substrate at room temperature. The resistive switching behaviors of the flexible device were slightly degraded upon different bending states, indicating the huge potential applications in the flexible electronics. The switching mechanism based on conducting filaments is proposed to explain the resistive switching behaviors.
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