Abstract
rf magnetron-sputter-deposited ZnS:TbOF thin-film electroluminescent (EL) phosphors 1 μm±10% thick were codoped with Ag, Cu, Ag+Cu, and Ce and tested with 60 Hz trapezoidal voltage pulses. After annealing at 500 °C for 60 min, the EL brightness at 20 V above threshold, B20, for Cu+Ag codoped ZnS:TbOF film was 67 cd/m2 compared to 55 cd/m2 for undoped ZnS:TbOF films. The B40 of Ce codoped ZnS:TbOF films annealed at the same conditions was 144 cd/m2 compared to 86 cd/m2 for undoped ZnS:TbOF films. While the brightness increase of Cu+Ag codoped ZnS:TbOF film is attributed to improve crystallinity and increased surface roughness, the increase due to Ce codoping of ZnS:TbOF film is more likely due to modified space charge in the ZnS:TbOF film.
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