Abstract
Chemical mechanical planarization (CMP) is recognized by the semiconductor industry as the technology of choice for eliminating local and global topographic variations on flat wafers. Several factors including a large number of input variables play a key role in controlling the CMP output parameters. One of the most important variables is the slurry composition which includes chemical additives and abrasive particles. This talk will provide a fundamental basis for lurry design to control the CMP output parameters.
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