Abstract
In this work MEMS switches have been developed using a standard CMOS technology (AMS 0.35μm technology). With this purpose the back-end metallization layers (based on aluminum) have been used in two different configurations: stack of metals and via layers or M4 upper metal layer. After the in-house post-processing based on wet etching releasing process, they have been characterized and electrically measured, showing good reliability (more than 20 cycles, in both approaches) abrupt behavior (24mV/decade M4 configuration and 5mV/decade stack approach) and good ION/IOFF ratio (1x102 M4 configuration and 1x103 stack switch).
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