Abstract
In this paper characteristics of one dimensional (1D) and two dimensional (2D) N-well tetra-lateral Position Sensitive Detectors (PSD) structures are reported. The PSDs have been fabricated using standard CMOS process. Measurements of the device parameters (dark current, resistance, and junction capacitance), responsivity, position resolution, position linearity and variations due to optical spot size shows that such PSD structures exhibits unique characteristics that are worth considering when designing the biasing and linearization circuits. Overall observation shows that both PSD structures can be successfully fabricated using standard CMOS technology. These measurements were primarily taken to determine the range of operating conditions for each device. This information is intended for chip designers to deduce specifications for designing on-chip signal conditioning and signal processing circuits to improve the performance of the device. Applications of PSDs include optical lateral, rotational or angular position sensing, surface smoothness measurements, range-finding instrumentation, 3D imaging and micro-mechanics.
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