Abstract
The objective of this paper is to explore the capability of a charge trapping control loop to continuously compensate charge induced by ionizing radiation in the dielectric of metal–oxide–semiconductor (MOS) capacitors. To this effect, two devices made with silicon oxide have been simultaneously irradiated with gamma radiation: one with constant voltage bias and the other working under a dielectric charge control. The experiment shows substantial charge trapping in the uncontrolled device, whereas, at the same time, the control loop is able to compensate the charge induced by gamma radiation in the second device.
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