Abstract
Transmission and analytical electron microscopy, nuclear backscattering, and secondary ion mass spectroscopy have been used to study the incorporation of Cl at the interface during the oxidation of Si. Oxidations were carried out in the range of 1100°–1200°C, for 10–120 min and with additions from 1–13%. It was found that a critical concentration of Cl is required before a Cl‐rich phase is observed. X‐ray microanalysis indicates that the matrix in the interfacial region still contains at least about as the Cl‐rich phase forms. These two observations suggest that the Cl‐rich phase formation takes place in order to reduce the reacted Cl supersaturation in the matrix. Agglomerates, whose growth occurs by thickening and/or coalescence phenomena, are the final morphology observed during the continuing Cl incorporation. Models relating Na‐ion passivation to the Cl‐rich phase are shown to require modification in terms of the microstructural development.
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