Abstract
We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of the cavity transmission reveal DQD charge stability diagrams and a charge-cavity coupling rate gc/2π= 23 MHz. These measurements indicate that electrons trapped in a Si DQD can be effectively coupled to microwave photons, potentially enabling coherent electron-photon interactions in silicon.
Highlights
We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity
The long coherence times that have been reported in Si pave the way for long range coupling of spin states using superconducting cavities in the circuit quantum electrodynamics architecture
In circuit quantum electrodynamics (cQED) systems with superconducting qubits, cavity photons are widely used for dispersive state readout, as the significant electric dipole moments of these devices result in large phase shifts in the a)Present Address: Department of Physics, University of California Santa Barbara, Santa Barbara, California 93106, USA
Summary
We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. Recent advances include the demonstration of two-qubit logic gates8 and the fabrication of a one-dimensional chain of nine QDs that was measured using three proximal charge detectors.9 the long coherence times that have been reported in Si pave the way for long range coupling of spin states using superconducting cavities in the circuit quantum electrodynamics (cQED) architecture.10,11
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