Abstract
A high recombination rate and high thermal budget for aluminum (Al) back surface field are found on the industrial p-type silicon solar cells. Direct metallization on lightly doped p-type silicon, however, exhibits a large Schottky barrier for the hole because of Fermi-level pinning effect. In this contribution, low temperature deposited, dopant-free chromium trioxide (CrO x , x\lt3) with high stability and high performance, is first applied in a p-type silicon solar cell as a hole-selective contact at the rear surface. Implementing the advanced holeselective contacts with CrO x /Ag/CrO x on the p-type silicon solar cell results in a power conversion efficiency of 20.3%.
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