Abstract
NiSi x films were deposited using chemical vapor deposition (CVD) with a Ni(PF 3) 4 and Si 3H 8/H 2 gas system. The step coverage quality of deposited NiSi x was investigated using a horizontal type of hot-wall low pressure CVD reactor, which maintained a constant temperature throughout the deposition area. The step coverage quality improved as a function of the position of the gas flow direction, where PF 3 gas from decomposition of Ni(PF 3) 4 increased. By injecting PF 3 gas into the Ni(PF 3) 4 and Si 3H 8/H 2 gas system, the step coverage quality markedly improved. This improvement in step coverage quality naturally occurred when PF 3 gas was present, indicating a strong relationship. The Si/Ni deposit ratio at 250 °C is larger than at 180 °C. It caused a decreasing relative deposition rate of Ni to Si. PF 3 molecules appear to be adsorbed on the surface of the deposited film and interfere with faster deposition of active Ni deposition species.
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