Abstract
Chemical solution deposition of BiFeO3 thin films is one of the most commercially available techniques to produce large-scale low-cost coatings for further application in memory devices. In this contribution, we implemented piezoresponse force and conductive atomic force microscopies to study the layer-by-layer sol-gel deposition of BiFeO3 thin films focusing on the local phase distribution, morphology, piezoelectric response, and leakage current. The final properties of resulting thin films are found to be determined not only by the composition of the gel and crystallization step but by the gelation step as well. The drying temperature and treatment duration of the solution is shown to drastically influence the film coverage, which finally determines the morphology of the films and behavior of the crystallization process. Acknowledgement: The research was funded by Russian Science Foundation, grant number 19-72-10076. The equipment of the Ural Center for Shared Use “Modern nanotechnology” UrFU was used.
Highlights
BiFeO3 (BFO) is one of the most interesting multiferroic thin-film materials because of its high spontaneous polarization and anti-ferromagnetic properties [1,2]
We focus on the morphological and compositional changes in the multilayer chemical solution deposition (CSD)-based BFO thin films prepared with different gelation procedures
To trace the effect of HTD microstructure on the leakage currents we studied a distribution of the local electric conductivity with the conductive atomic force microscopy (c-AFM) method (Figure 4)
Summary
BiFeO3 (BFO) is one of the most interesting multiferroic thin-film materials because of its high spontaneous polarization and anti-ferromagnetic properties [1,2]. BFO demonstrates a variety of phenomena at the interfaces: electrical conductivity [3], enhanced dielectric response [4], and flexoelectricity [5] These interfaces can be created and erased by the application of the external electric field [3,6,7], as well as they are shown to be responsible to impact on the resistive switching phenomena occurring in BFO films [6,8,9]. PLD and RF sputtering were demonstrated to produce high-quality epitaxial BFO films with a small concentration of the structural defects and low leakage current [10,12]. CSD films are not very reproducible in their ferroelectric properties and possess a high value of leakage current impeding their further implementation in the devices [14]
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