Abstract
The chemical reactivity of electron-doped and hole-doped graphene was studied by means of first principles calculations, on the basis of dispersion corrected density functional theory. To model hole-doped graphene, the widely known electron acceptor 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) was utilized, while the electron donor tetrathiafulvalene (TTF) was selected for the electron-doped case. The results demonstrate that the reactivity of graphene can be modified by the adsorption of electron donating/withdrawing molecules. The reactions considered were the addition of fluorine atoms and hydroxyl radicals. In both cases, it was observed that the adsorption of F4-TCNQ and TTF increased the reactivity of graphene. This outcome was expected for electron-doped graphene because we have recently shown that lithium increases the reactivity of graphene. Yet, for F4-TCNQ, the finding is surprising given that this molecule accepts 0.4 e– from graphene. The gas phase free energies of associati...
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