Abstract
In this study, we investigated the effects generated by ion bombardment on the charge transport properties of organic semiconductor devices. Focused ion beam (FIB) technology was used to induce the bombardment at different ion doses on poly(3-hexylthiophene) (rrP3HT) and poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2) organic semiconductors. The characterization techniques demonstrated the presence of two regimes: at 2E13 and 2E14 doses. UV–Vis absorption, Raman spectroscopy and advanced electron microscopy analysis reveal the presence of a chemically and structurally modified layer approximately 40 nm thick. The results were confirmed by theoretical ion tracking simulation nearly 40–50 nm thick from the organic surface. The dependence of charge transport and ion bombardment was clearly evidenced by modifications in the charge carrier mobility that formed defects induced by the ion beams, such as degassing, cross-linking polymer chains, and the transformation of functional groups in the ion tracking region.
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