Abstract
Transient capacitance measurements on n- and p-type hydrogenated amorphous silicon (a-Si:H) junction structures show metastable hole and electron trapping above the defect-equilibration temperature. Both electrons and holes can be trapped in the same doped layer. Each charge has its own annealing activation energy, virtually independent of dopant type. In both doping types, the majority carrier has the faster annealing time. These features result from making measurements above the isokinetic temperature.
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