Abstract
The OCV, chemical diffusion coefficient and thermodynamic enhancement factor has been determined as a function of lithium content in MOCVD TiS 2 films. The films were deposited in a cold-wall reactor at 7.5 mbar, 207 and 250°C, and a feed gas composition of 0.25 vol% TiCl 4 and 1.4 vol% hexamethyldisilathiane. The films differ markedly in microstructure. Electrochemical measurements include GITT and impedance spectroscopy of the cell TiS 2| 1M LiClO 4 in PC|lI. The OCV of the films varies from 2.7 V ( x = 0) to 1.9 V ( x = 1.0). The chemical coefficient in the 207°C film ranges 2×10 −15 cm 2/s (Li 0.01TiS 2) to 3×10 −13 cm 2/s (LiTiS 2); in the 250°C film from 2×10 −14 cm 2/s (Li 0.02TiS 2) to 8.5×10 −12 cm 2/s (Li 0.66TiS 2). The thermodynamic enhancement factor increases for both films with lithium composition from ±5 to ±50. The 250°C film shows a dip in the thermodynamic enhancement factor at x≈0.4. Preliminary results on the influence of (MO) CVD conditions on the deposition rate and morphology of TiS 2 are presented.
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