Abstract
Experimental measurements of charge transport within the plane of 1− and 4−deg grain boundaries in n-type germanium have been made. The grain boundary conductance parallel and perpendicular to the dislocations has been measured between liquid helium and room temperatures and for different values of bias voltage applied to the boundary. The experimental results show a marked anisotropy in the conductance in the grain boundary plane and an unexpected strong dependence of conductance on bias voltage.
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