Abstract
Charge motion on the outer silicon oxide surface of a MOS structure is investigated by measuring the charging ( i c) and the discharging ( i d) currents. After the initial exponential charging or discharging current which follows a switch in voltage has decayed, i c and i d are found to be in proportion to the rims of the electrode in ambients of about 50 % relative humidity. The charging and discharging curves can be normalized with respect to charging voltage and charging time. By comparing the charging and the discharging currents with those of an equivalent circuit consisting of a distributed capacitance-resistance network, a surface resistance per square was estimated. The dependence of the surface resistance on humidity was determined. However, the simple equivalent circuit used cannot account for all features of the charging and discharging curves. Possible reasons for the discrepancies observed are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
