Charge-coupled devices with submicron gaps

Abstract

The fabrication of two-phase buried channel charge-coupled devices with 100 transfer electrodes is described. The gate electrodes were constructed using only one level of polysilicon and with interelectrode gaps of approximately 0.5 µm. The edge etch technique was employed to provide 750 A wide windows to the polysilicon layer and then etching the polysilicon structure through these windows to produce submicron gaps. The use of the device as an analog delay line was demonstrated with a typical transfer efficiency of 0.99992 at 5 MHz.