Abstract
The paper presents a comprehensive charge modelling approach for field-effect transistor (FET) devices. For the first time an artificial neural network (ANN) is combined with the division-by-current approach to FET charge modelling. Using this technique a large-signal charge model is extracted for a 10 W GaN device from MACOM. It is shown through measurements that excellent results may be obtained using just a single gate charge function, integrated analytically from small-signal measurements.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
