Abstract
Dysprosium-doped zirconium oxide thin films grown by atomic layer deposition (ALD) were studied in order to assess its suitability as dielectric in metal–insulator–metal (MIM) electronic devices. The films show high stability and linearity. The film quality clearly improves after annealing at 700°C in O2 during 30min. All films crystallize in as-deposited state and contained cubic and/or tetragonal ZrO2 phases. Current and charge measurements show hysteresis when varying the applied voltage. Structures with the highest Dy content in the dielectric showed the widest hysteresis cycles. Scanning electron microscopy reveals that the crystallite grain size increases with Dy content. A correlation between crystal grain size and I–V, and Q–V hysteresis exist, thus indicating that a charging process at the grain boundaries takes place.
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