Abstract
Abstract Continuous development in the semiconductor process technology has led to the fabrication of devices with nanometer scale feature resolution. Resonance enhanced atomic force microscopy infrared (AFM-IR) is a novel technique with potential to overcome some limitations of existing tools. This manuscript illustrates chemical characterization of the nanoscale skin and polyester contaminant on silicon wafer using resonance enhanced AFM-IR spectroscopy. Resonance enhanced AFM-IR offers superior sensitivity for nanoscale organic contaminants. To demonstrate this capability, AFM-IR spectra were obtained from contaminants on silicon wafers, and the spectra correlated with a high confidence to a standard transmission FTIR spectral database. In addition, a newly developed high speed spectral acquisition scheme, which augments the reliability of nanoscale defect characterization by reducing the overall data acquisition time and enabling users to perform repeated measurements for statistical analysis, is established.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
