Abstract
ZnO–SnO2 nanocomposite thin films were produced using pulsed laser ablation of pie-shaped ZnO–SnO2 oxides target, and their field effect electronic transport properties investigated as a function of annealing temperature. The films have a nanocomposite structure consisting of ZnO and SnO2 nanoparticles. The amorphous ZnO–SnO2 nanocomposite thin films, as oxide semiconductors, exhibited excellent electronic transport properties with saturation mobility of around 16.9cm2/Vs, turn-on voltage of ~−1V, subthreshold swing of 0.22V/decade, and high drain current on-to-off ratio of over 1010, enough to operate for next-generation microelectronic devices. These results are presumed due to the unique electronic structure of amorphous nanocomposite coupled with two heavy-metal Zn and Sn cations having spherically symmetric s-orbitals.
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