Abstract

AbstractThin Zr films were deposited on natural single crystal diamond (100) substrates by ebeam evaporation in ultra-high vacuum (UHV). Before metal deposition the surfaces were cleaned by UHV anneals at either 500°C or 1150°C. Following either one of these treatments a positive electron affinity was determined by means of UV photoemission spectroscopy (UPS). Depositing 2Å of Zr induced a NEA on both surfaces. Field emission current - voltage measurements resulted in a threshold field (for a current of 0.1 µA) of 79 V/µm for positive electron affinity diamond surfaces and values as low as 20 V/µm for Zr on diamond.

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