Abstract
AbstractResults of a photoluminescence excitation (PLE) study of Er-implanted porous Si (Er: PSi) are presented. Erbium was implanted at a dose of 1×1015 Er/cm2 at 380 keV and annealed for 30 minutes at 6507deg;C. We observed a nearly identical PLE intensity behavior from 1.54 μm and visible-emitting Er: PSi. This observation indicates that both visible and infrared photoluminescence (PL) arise from carrier mediated processes, and that the 1.54 μm Er3+ PL is related to the porous Si nanostructures. Measurements of the temperature dependence (15–375K) of Er3+ PL intensity and lifetime are also reported.
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