Abstract
Thin films are used in many technological applications. The characterization of thin films requires compositional information as a function of sample depth. Ion beam analysis techniques, such as Rutherford backscattering spectrometry and elastic recoil detection (ERD), can provide this information in a uniform way for all elements and as absolute concentrations without relying on standards. These techniques can fully be exploited when projectile beams of heavy ions such as Si or Au are used. This improves the elemental resolution and the depth resolution when compared with standard He ion beam analysis. The use of gas ionization detectors increases detection efficiency and minimizes the beam exposure of the samples, so that the analysis is essentially nondestructive. The sampling depth of a few micrometers makes these techniques ideal for the stoichiometric analysis of the surface region of homogeneous materials and, in particular, thin surface films.
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