Abstract
Abstract A new CPM (Constant Photocurrent Method) system, which improves the accuracy of measurement by suppressing the effect of optical interference, has been developed. This system enables determination of the defect density (Nd) and the slope of the Urbach tail (Ech) of a-Si:H films for solar cells with improved accuracy. The system has shown that Nd and Ech are minimized when Eopt = 1.55–1.61 eV. Here, Eopt is the optical gap determined from ( αhv 1 3 versus hv plots. The conversion efficiency of a-Si:H solar cells can be optimized by using the i-layer in this range of Eopt.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
