Characterization of tellurium and silicon as n-type dopants for GaAsBi

Abstract

Films of n-GaAs1-xBix films were grown via molecular beam epitaxy using both Si and Te as dopant sources. Electron mobility was characterized by Hall effect measurements as a function of carrier concentration and Bi content for films with bismuth fractions of x = 0.02 and x = 0.06. While GaAsBi:Te shows lower majority carrier mobility than GaAsBi:Si at low Bi concentrations, the two become comparable as Bi content increases. Furthermore, it was observed that in the presence of bi-metallic Bi-Ga droplets on the film surface, films doped with Si display p-type behavior, likely due to Si preferentially occupying group-V sites. The use of Te as a dopant always resulted in n-type epilayers, making it a more reliable dopant choice for high Bi content films. Finally, ex situ annealing was studied as a method to improve majority carrier mobility in GaAs0.98Bi0.02:Te films, with a 10 min anneal at 350 °C resulting in a 30% improvement in electron mobility. Improvement of film quality was confirmed through spectroscopic ellipsometry examination of film optical properties. Annealing at higher temperatures resulted in electrical, optical, and structural degradation of the GaAsBi films.